Magnetron sputtering target

1) Principle of magnetron sputtering:
An orthogonal magnetic field and electric field are added between the sputtering target electrode (cathode) and anode to fill the required inert gas (usually Ar gas) in the high vacuum chamber. The permanent magnet forms a 250-350 Gauss magnetic field on the surface of the target material, which is composed of the orthogonal electromagnetic field and the high voltage electric field. Under the action of electric field, Ar gas ionizes into positive ions and electrons, and there is a certain negative high pressure on the target. The electrons emitted from the target electrode are affected by the magnetic field and the ionization probability of the working gas is increased. A high density plasma is formed near the cathode. Under the action of Lorentz force, Ar ions accelerate to the target surface, bombard the target surface at a very high speed, so that the atoms on the target are followed by sputtering Based on the principle of momentum conversion, the film was deposited on the substrate with high kinetic energy. There are two kinds of magnetron sputtering: DC sputtering and RF sputtering. The principle of DC sputtering equipment is simple and its speed is fast when sputtering metal. RF sputtering can be used in a wider range, not only for sputtering conductive materials, but also for sputtering non-conductive materials. At the same time, it can also be used for reactive sputtering to prepare oxides, nitrides, carbides and other compounds. If the frequency of RF is increased, it will become microwave plasma sputtering. Nowadays, electron cyclotron resonance (ECR) type microwave plasma sputtering is commonly used.
2) Magnetron sputtering target type:
Metal sputtering target, alloy sputtering target, ceramic sputtering target, boride ceramic sputtering target, carbide ceramic sputtering target, fluoride ceramic sputtering target, nitride ceramic sputtering target, oxide ceramic sputtering target, selenide ceramic sputtering target, silicide ceramic sputtering target, sulfide ceramic sputtering target, telluride ceramic sputtering target, etc He ceramic target, Cr SiO, InP, pbas, InAs.